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UNISONIC TECHNOLOGIES CO., LTD. DTA143T
DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input.
PNP SILICON TRANSISTOR
3
1 2 3
SOT-23
1
SOT-323
EQUIVALENT CIRCUIT
R1 C
2 3
B
2
E
1
SOT-523
* Pb-free plating product number: DTA143TL
ORDERING INFORMATION
Order Number Normal Lead Free Plating DTA143T-AE3-R DTA143TL-AE3-R DTA143T-AL3-R DTA143TL-AL3-R DTA143T-AN3-R DTA143TL-AN3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel
DTA143TL-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
AE3T
For SOT -23/SOT -323 Package
A5T
For SOT -523 Package
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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DTA143T
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise specified )
RATINGS UNIT -50 V -50 V -5 V -100 mA SOT-523 150 mW Collector Power Dissipation PC SOT-23/SOT-323 200 mW Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS Collector-base breakdown voltage BVCBO IC=-50 A Collector-emitter breakdown voltage BVCEO IC=-1mA Emitter-base breakdown voltage BVEBO IE=-50 A Collector cutoff current ICBO VCB=-50V Emitter cutoff current IEBO VEB=-4V Collector-emitter saturation voltage VCE(SAT) IC=-5mA, IB= -0.25mA DC Current Gain hFE VCE=-5V, IC= -1mA Input resistance R1 Transition frequency fT VCE=-10V, IE=5mA, f=100MHz * * Transition frequency of the device MIN -50 -50 -5 TYP MAX UNIT V V V A -0.5 A -0.5 -0.3 V 600 6.11 k MHz
100 3.29
250 4.7 250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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DTA143T
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current VCE=-5V
500
PNP SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs. Collector Current
Collector Saturation Voltage, VCE(SAT)(mV)
-1000
1000
Ic/IB=20
-500 -200 -100 -50 -20 -10 -5 -2 -1 -0.1 -0. 2 -0.5 -1 -2 -5 -10
DC Current Gain, hFE
200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10
Ta=100 25 -40
Ta=100 25 -40
-20
-50
-100
-20
-50
-100
Collector Current, Ic (mA)
Collector Current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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